Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range
Real time dosimetry is a major challenge in medical, industrial and education fields. One promising candidate for dosimetry is the metal oxide semiconductor fieldeffect transistor (MOSFET) dosimeter. A new design of the MOSFET dosimeter is being developed in a different study to measure the dose...
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| Format: | Thèse |
| Langue: | anglais |
| Publié: |
2022
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| Accès en ligne: | http://eprints.usm.my/59120/ |
| Abstract | Abstract here |
| Résumé: | Real time dosimetry is a major challenge in medical, industrial and education
fields. One promising candidate for dosimetry is the metal oxide semiconductor fieldeffect
transistor (MOSFET) dosimeter. A new design of the MOSFET dosimeter is
being developed in a different study to measure the dose delivered to the tissue layers.
This thesis will discuss the development of a new type of radiation detector based on
the characteristics of different metal oxide materials, and a new model of radiation
detector, known as extended gate field-effect transistor (EGFET) and the optimization
of the operating conditions. |
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