Growth Of Gallium Nitride Nanomaterials By Sol-Gel Dip Coating Method

• Main Author: Hamid, Maizatul Akmam Ab
• Format: Thesis
• Language: English
• Published: 2024
• Subjects: QC1 Physics (General)
• Online Access: http://eprints.usm.my/63578/

In the early phase, ethanol-based precursor solution was employed to synthesis gan nanomaterials using diethaolamine as surfactant. First, we investigated the impact of varying withdrawal speeds towards morphological and structural properties of dip coated gan nanomaterials. By optimizing withdrawal speed of 50 mm/min, the xrd spectra shows highest intensity which exhibits lowest micro strain and largest crystallite size among other samples. Further, we investigate the relationship between the impacts of varying dipping cycle towards the crystalline quality of the gan nanomaterials. We observe the emergence of gan(002) plane by raising the total number of dipping process from one to eight cycle. The strength of gan e2 (high) peak reaches its maximum and confirms the phase of wurtzite gan for sample deposited at fifth layer. Next, the effects of varied amount of surfactant towards morphological structure of gan nanomaterials were examined. At 0.75 ml of dea, film consists of hexagonal grains which consist of favoured growth orientations of the gan(002) plane. The xrd analysis confirms the high degree of crystallinity of the sample with the highest value for ga:n atomic ratio. The gan e2 (high) phonon mode from raman fitted gaussian peak reveals that the films deposited at 0.75 ml of dea is relatively stress free. A precursor sol utilizing mono-ethanolamine (mea) and 2-methoxyethanol (2-me) were proposed owing to their superior wettability and rapid rate of evaporation.