Gallium Nitride (GaN) Based Gas Sensor Using Catalytic Metal [TK7871.15.G33 H884 2005 f rb].

Dalam kajian ini, Pt, Pd, Ag dan Ni dimendapkan ke atas GaN dan AlGaN jenis p dan jenis n sebagai sentuhan logam mangkinan dengan menggunakan sistem percikan menerusi topeng logam bagi mengesan gas N2, H2 dan CH4 dengan kepekatan dan ketebalan logam yang berbeza dalam julat dari 50 hinga 300nm. Kemu...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखक:	Omer Hudeish, Abdo Yahya
स्वरूप:	थीसिस
भाषा:	अंग्रेज़ी
प्रकाशित:	2005
विषय:	TK7800-8360 Electronics
ऑनलाइन पहुंच:	http://eprints.usm.my/8635/

समान संसाधन

Gallium Nitride (Gan) Based Gas Sensor Using Catalytic Metal
द्वारा: Hudeish, Abdo Yahya Omer
प्रकाशित: (2005)

Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
द्वारा: Al-Heuseen, Khalled Mhammad Kallef
प्रकाशित: (2011)

Kajian Kesan Mikrostruktur Yang Berbeza Terhadap Sifat Dielektrik Cacu3ti4o12 [TK7871.15.C4 J94 2008 f rb].
द्वारा: Mohamed, Julie Juliewatty
प्रकाशित: (2008)

Design And Experimental Studies Of Multilayer Coatings For Applications In Gallium Nitride Light Emitting Devices [TK7871.89.L53 N247 2006 f rb].
द्वारा: Ahmed, Naser Mahmoud
प्रकाशित: (2006)

Morphological And Optical Properties Of Porous Gallium Nitride (Gan) Fabricated By Photoelectrochemical Process
द्वारा: Cheah , Sook Fong
प्रकाशित: (2015)

Pengoptimunan Proses Pengkalsinan Dan Pensinteran Untuk Manghasilkan Kalsium Kuprum Mangan Oksida (Cacu3mn4o12) Melalui Kaedah Tindakbalas Keadaan Pepejal [TK7871.15.C4 W276 2008 f rb].
द्वारा: Abd Rashid, Mohd Warikh
प्रकाशित: (2007)

Gallium nitride nanowire by nitridation of electrochemically grown gallium oxide on silicon
द्वारा: Mohd. Ghazali, Norizzawati
प्रकाशित: (2015)

Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai
द्वारा: Sivanathan , Pariasamy @ Chelladurai
प्रकाशित: (2018)

Design of silicon nitride metal-insulator-metal capacitor using 0.15 um gallium arsenide technology
द्वारा: Sanusi, Rasidah
प्रकाशित: (2010)

Structural And Optical Studies Of Wide Band-Gap AlxGa1-xN (0 ≤ x ≤ 1) Semiconductors [TK7871.85. N577 2007 f rb].
द्वारा: Ng, Sha Shiong
प्रकाशित: (2007)

Indium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate
द्वारा: Alias, Ezzah Azimah
प्रकाशित: (2024)

Optimization of AlN/GaN strained-layer superlattice for GaN epitaxy on Si(111) substrate / Yusnizam Yusuf
द्वारा: Yusnizam, Yusuf
प्रकाशित: (2017)

Ohmic contact formation of gallium nitride and electrical properties improvement
द्वारा: Aiman, Mohd Halil
प्रकाशित: (2016)

Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate
द्वारा: Samsudin, Muhammad Esmed Alif
प्रकाशित: (2016)

Fabrication Of Gallium Nitride Nanowires Via Chemical Vapour Deposition
द्वारा: Low, Li Li
प्रकाशित: (2012)

PA-MBE GaN-Based Optoelectronics on Silicon Substrates
द्वारा: Chuah , Lee Siang
प्रकाशित: (2009)

Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates
द्वारा: Fong, Chee Yong
प्रकाशित: (2016)

High Performance Current Amplifier [TK7871.58.P4 G896 2006 f rb] [Microfiche 8561].
द्वारा: Gu, Hock Chin
प्रकाशित: (2006)

DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
द्वारा: Munir, Tariq
प्रकाशित: (2011)

Al-Ta2O5-GaN Semiconductor Device Structure
द्वारा: Yeoh, Lai Seng
प्रकाशित: (2014)

Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
द्वारा: Shamsuddin, Siti Nur Atikah
प्रकाशित: (2019)

Dual And Triple Feeding For Full-Wave Dipole Antenna [TK7871.67.D56 H677 2007 f rb].
द्वारा: A. Hmood, Khedher
प्रकाशित: (2007)

Rekabentuk Dan Fabrikasi ISFET Berasaskan Silikon Sebagai Penderia Ph [TK7871.95. R893 2007 f rb].
द्वारा: Abd Rani, Rozina
प्रकाशित: (2007)

High Speed CMOS VCO For Advanced Communications [TK7871.99.M99 C435 2003 f rb][Microfiche 7271].
द्वारा: PPKEE, Pusat Pengajian Kejuruteraan Elektrik & Elektronik
प्रकाशित: (2003)

Design And Experimental Studies Of Multilayer Coating For Applications In Gallium Nitride Light Emitting Devices
द्वारा: Ahmed, Naser Mahmoud
प्रकाशित: (2006)

In-depth study of semipolar (11-22) InGaN/GaN-based led towards efficient green emission / Gary Tan
द्वारा: Tan, Gary
प्रकाशित: (2024)

A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
द्वारा: Hussein, Asaad Shakir
प्रकाशित: (2011)

The Effects Of Zinc Oxide Microstructure On The Electrical Characteristics Of Low-Voltage Ceramic Varistors. [TK7871.99.V3S525frb] [Microfiche 7646]
द्वारा: Ahmad, Shahrom
प्रकाशित: (2004)

Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
द्वारा: Kamarulzaman, Azharul Ariff
प्रकाशित: (2017)

The Growth Of GaN-Based Low Dimensional Structures By CVD Using Platinum And Palladium Catalysts
द्वारा: Lay Kim, Tan
प्रकाशित: (2019)

Design And Development Of Unipolar SPWM Switching Pulses For Single Phase Full Bridge Inverter Application [TK7871.85. B151 2008 f rb].
द्वारा: Ismail, Baharuddin
प्रकाशित: (2008)

Growth and properties of polar and non-polar InGaN/GaN LEDS on patterned and M-plane sapphire substrates / Mohd Adreen Shah Azman Shah
द्वारा: Mohd Adreen Shah , Azman Shah
प्रकाशित: (2022)

Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].
द्वारा: Tan, Philip Beow Yew
प्रकाशित: (2008)

Crystal quality enhancement of semi-polar (11 22) InGaN/GaN-based LED grown on M-Plane sapphire substrate via MOCVD / Omar Ayad Fadhil
द्वारा: Omar Ayad , Fadhil
प्रकाशित: (2019)

Epitaxial growth of semi-polar (11-22) gallium nitride FOR UV photosensing application / Abdullah Haaziq Ahmad Makinudin
द्वारा: Abdullah Haaziq , Ahmad Makinudin
प्रकाशित: (2020)

First-principles study of structural, electronic and optical properties of AlN, GaN, InN and BN compounds
द्वारा: Al-Sardia, Mowafaq Mohammad Kethyan
प्रकाशित: (2013)

A study of temperate climate for comfort temperature predictions in natural ventilation buildings using Ashrae Rp-884 database
द्वारा: Tay, Lee Yong
प्रकाशित: (2019)

Effect of oxidation towards interfacial layer of indium tin-oxide nanostructure and p-type gallium nitride / Norhilmi Mohd Zahir
द्वारा: Norhilmi , Mohd Zahir
प्रकाशित: (2023)

Development Of Core Layer Materials Using Particulate Filled Epoxy Composites [TK7870.15. T261 2008 f rb].
द्वारा: Teh, Pei Leng
प्रकाशित: (2008)

Growth of semi-polar (11-22) GaN epitaxial layer on M-plane sapphire via MOCVD / Mohd Afiq Anuar
द्वारा: Mohd Afiq , Anuar
प्रकाशित: (2020)