Gallium Nitride (GaN) Based Gas Sensor Using Catalytic Metal [TK7871.15.G33 H884 2005 f rb].
Dalam kajian ini, Pt, Pd, Ag dan Ni dimendapkan ke atas GaN dan AlGaN jenis p dan jenis n sebagai sentuhan logam mangkinan dengan menggunakan sistem percikan menerusi topeng logam bagi mengesan gas N2, H2 dan CH4 dengan kepekatan dan ketebalan logam yang berbeza dalam julat dari 50 hinga 300nm. Kemu...
| Main Author: | Omer Hudeish, Abdo Yahya |
|---|---|
| Format: | Thesis |
| Language: | English |
| Published: |
2005
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/8635/ |
| Abstract | Abstract here |
Similar Items
Gallium Nitride (Gan) Based Gas Sensor
Using Catalytic Metal
by: Hudeish, Abdo Yahya Omer
Published: (2005)
by: Hudeish, Abdo Yahya Omer
Published: (2005)
Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
by: Al-Heuseen, Khalled Mhammad Kallef
Published: (2011)
by: Al-Heuseen, Khalled Mhammad Kallef
Published: (2011)
Kajian Kesan Mikrostruktur Yang Berbeza Terhadap Sifat Dielektrik Cacu3ti4o12 [TK7871.15.C4 J94 2008 f rb].
by: Mohamed, Julie Juliewatty
Published: (2008)
by: Mohamed, Julie Juliewatty
Published: (2008)
Aluminium nitride (AlN) as buffer layer for deposition of gallium nitride (GaN) thin films on silicon substrates using magnetron sputtering technique
by: Tahan, Muliana
Published: (2021)
by: Tahan, Muliana
Published: (2021)
Design And Experimental Studies Of Multilayer Coatings For Applications In Gallium Nitride Light Emitting Devices
[TK7871.89.L53 N247 2006 f rb].
by: Ahmed, Naser Mahmoud
Published: (2006)
by: Ahmed, Naser Mahmoud
Published: (2006)
Morphological And Optical
Properties Of Porous Gallium Nitride
(Gan) Fabricated By
Photoelectrochemical Process
by: Cheah , Sook Fong
Published: (2015)
by: Cheah , Sook Fong
Published: (2015)
Pengoptimunan Proses Pengkalsinan Dan Pensinteran Untuk Manghasilkan Kalsium Kuprum Mangan Oksida (Cacu3mn4o12) Melalui Kaedah Tindakbalas Keadaan Pepejal
[TK7871.15.C4 W276 2008 f rb].
by: Abd Rashid, Mohd Warikh
Published: (2007)
by: Abd Rashid, Mohd Warikh
Published: (2007)
Gallium nitride nanowire by nitridation of electrochemically grown gallium oxide on silicon
by: Norizzawati Mohd. Ghazali
Published: (2025)
by: Norizzawati Mohd. Ghazali
Published: (2025)
Design of silicon nitride metal-insulator-metal capacitor using 0.15 um gallium arsenide technology
by: Sanusi, Rasidah
Published: (2010)
by: Sanusi, Rasidah
Published: (2010)
Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai
by: Sivanathan , Pariasamy @ Chelladurai
Published: (2018)
by: Sivanathan , Pariasamy @ Chelladurai
Published: (2018)
Indium Gallium Nitride Based Light Emitting Diode Using Pre-Roughened Backside (N-Face) Gallium Nitride Substrate
by: Alias, Ezzah Azimah
Published: (2024)
by: Alias, Ezzah Azimah
Published: (2024)
Structural And Optical Studies Of Wide Band-Gap AlxGa1-xN (0 ≤ x ≤ 1) Semiconductors [TK7871.85. N577 2007 f rb].
by: Ng, Sha Shiong
Published: (2007)
by: Ng, Sha Shiong
Published: (2007)
Dopants concentration effect on gallium arsenide and gallium nitride-based homojunction LED epi-layers
by: Faris Azim Ahmad Fajri
Published: (2024)
by: Faris Azim Ahmad Fajri
Published: (2024)
Optimization of AlN/GaN strained-layer superlattice for GaN epitaxy on Si(111) substrate / Yusnizam Yusuf
by: Yusnizam, Yusuf
Published: (2017)
by: Yusnizam, Yusuf
Published: (2017)
Ohmic contact formation of gallium nitride and electrical properties improvement
by: Aiman, Mohd Halil
Published: (2016)
by: Aiman, Mohd Halil
Published: (2016)
Fabrication Of Gallium Nitride Nanowires Via Chemical Vapour Deposition
by: Low, Li Li
Published: (2012)
by: Low, Li Li
Published: (2012)
Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate
by: Samsudin, Muhammad Esmed Alif
Published: (2016)
by: Samsudin, Muhammad Esmed Alif
Published: (2016)
Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates
by: Fong, Chee Yong
Published: (2016)
by: Fong, Chee Yong
Published: (2016)
Electrical and optical characterization of commercial GaN and InGaN LED subjected to electron radiation
by: Anati Syahirah binti Hedzir
Published: (2024)
by: Anati Syahirah binti Hedzir
Published: (2024)
PA-MBE GaN-Based Optoelectronics on Silicon Substrates
by: Chuah , Lee Siang
Published: (2009)
by: Chuah , Lee Siang
Published: (2009)
High Performance Current Amplifier [TK7871.58.P4 G896 2006 f rb] [Microfiche 8561].
by: Gu, Hock Chin
Published: (2006)
by: Gu, Hock Chin
Published: (2006)
Dual And Triple Feeding For Full-Wave Dipole Antenna [TK7871.67.D56 H677 2007 f rb].
by: A. Hmood, Khedher
Published: (2007)
by: A. Hmood, Khedher
Published: (2007)
Rekabentuk Dan Fabrikasi ISFET Berasaskan Silikon Sebagai Penderia Ph [TK7871.95. R893 2007 f rb].
by: Abd Rani, Rozina
Published: (2007)
by: Abd Rani, Rozina
Published: (2007)
Design And Experimental Studies
Of Multilayer Coating For
Applications In Gallium
Nitride Light Emitting
Devices
by: Ahmed, Naser Mahmoud
Published: (2006)
by: Ahmed, Naser Mahmoud
Published: (2006)
High Speed CMOS VCO For Advanced Communications
[TK7871.99.M99 C435 2003 f rb][Microfiche 7271].
by: PPKEE, Pusat Pengajian Kejuruteraan Elektrik & Elektronik
Published: (2003)
by: PPKEE, Pusat Pengajian Kejuruteraan Elektrik & Elektronik
Published: (2003)
Al-Ta2O5-GaN
Semiconductor Device Structure
by: Yeoh, Lai Seng
Published: (2014)
by: Yeoh, Lai Seng
Published: (2014)
DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
by: Munir, Tariq
Published: (2011)
by: Munir, Tariq
Published: (2011)
Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
by: Shamsuddin, Siti Nur Atikah
Published: (2019)
by: Shamsuddin, Siti Nur Atikah
Published: (2019)
The Effects Of Zinc Oxide Microstructure On The Electrical Characteristics Of Low-Voltage Ceramic Varistors.
[TK7871.99.V3S525frb] [Microfiche 7646]
by: Ahmad, Shahrom
Published: (2004)
by: Ahmad, Shahrom
Published: (2004)
A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
by: Hussein, Asaad Shakir
Published: (2011)
by: Hussein, Asaad Shakir
Published: (2011)
Design And Development Of Unipolar SPWM Switching Pulses For Single Phase Full Bridge Inverter Application [TK7871.85. B151 2008 f rb].
by: Ismail, Baharuddin
Published: (2008)
by: Ismail, Baharuddin
Published: (2008)
In-depth study of semipolar (11-22) InGaN/GaN-based led towards efficient green emission / Gary Tan
by: Tan, Gary
Published: (2024)
by: Tan, Gary
Published: (2024)
Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].
by: Tan, Philip Beow Yew
Published: (2008)
by: Tan, Philip Beow Yew
Published: (2008)
Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
by: Kamarulzaman, Azharul Ariff
Published: (2017)
by: Kamarulzaman, Azharul Ariff
Published: (2017)
The Growth Of GaN-Based Low
Dimensional Structures By CVD Using
Platinum And Palladium Catalysts
by: Lay Kim, Tan
Published: (2019)
by: Lay Kim, Tan
Published: (2019)
Epitaxial growth of semi-polar (11-22) gallium nitride FOR UV photosensing application / Abdullah Haaziq Ahmad Makinudin
by: Abdullah Haaziq , Ahmad Makinudin
Published: (2020)
by: Abdullah Haaziq , Ahmad Makinudin
Published: (2020)
Growth and properties of polar and non-polar InGaN/GaN LEDS on patterned and M-plane sapphire substrates / Mohd Adreen Shah Azman Shah
by: Mohd Adreen Shah , Azman Shah
Published: (2022)
by: Mohd Adreen Shah , Azman Shah
Published: (2022)
First principal study of structural, electronic and optical properties of AIN, GaN, InN and BN compounds
by: Al-Sardia, Mowafaq Mohammad Kethyan
Published: (2025)
by: Al-Sardia, Mowafaq Mohammad Kethyan
Published: (2025)
Effect of oxidation towards interfacial layer of indium tin-oxide nanostructure and p-type gallium nitride / Norhilmi Mohd Zahir
by: Norhilmi , Mohd Zahir
Published: (2023)
by: Norhilmi , Mohd Zahir
Published: (2023)
Crystal quality enhancement of semi-polar (11 22) InGaN/GaN-based LED grown on M-Plane sapphire substrate via MOCVD / Omar Ayad Fadhil
by: Omar Ayad , Fadhil
Published: (2019)
by: Omar Ayad , Fadhil
Published: (2019)
Similar Items
-
Gallium Nitride (Gan) Based Gas Sensor
Using Catalytic Metal
by: Hudeish, Abdo Yahya Omer
Published: (2005) -
Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
by: Al-Heuseen, Khalled Mhammad Kallef
Published: (2011) -
Kajian Kesan Mikrostruktur Yang Berbeza Terhadap Sifat Dielektrik Cacu3ti4o12 [TK7871.15.C4 J94 2008 f rb].
by: Mohamed, Julie Juliewatty
Published: (2008) -
Aluminium nitride (AlN) as buffer layer for deposition of gallium nitride (GaN) thin films on silicon substrates using magnetron sputtering technique
by: Tahan, Muliana
Published: (2021) -
Design And Experimental Studies Of Multilayer Coatings For Applications In Gallium Nitride Light Emitting Devices
[TK7871.89.L53 N247 2006 f rb].
by: Ahmed, Naser Mahmoud
Published: (2006)
