Modeling and simulation of single and double gates ion sensitive field effect transistor for biomedical applications

The modeling of Ion Sensitive Field Effect Transistor (ISFET) generally starts with its analogy to MOS devices and its threshold dependence on pH. Massobrio et al. proposed a macro-model plug in for SPICE. It was later modified to fit general SPICE based simulators without the need for a plug-in sof...

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Bibliographic Details
Main Author:	Dinar, Ahmed Musa
Format:	Thesis
Language:	English English
Published:	2020
Subjects:	T Technology (General) TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utem.edu.my/id/eprint/25424/ https://plh.utem.edu.my/cgi-bin/koha/opac-detail.pl?biblionumber=119777
Abstract	Abstract here

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