The morphology and structural properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition
The growth and characterization of silicon carbide (SiC) quantum dots (QDs) are reported in this work. The SiC QDs were grown using plasma enhanced chemical vapour deposition (PECVD) at 150 MHz radio frequency (RF). A mixture of silane (SiH4) and methane (CH4) with a ratio of 1:4 and diluted in hydr...
| मुख्य लेखक: | Abd. Karim, Nur Farah Nadia |
|---|---|
| स्वरूप: | थीसिस |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
2019
|
| विषय: | |
| ऑनलाइन पहुंच: | http://eprints.utm.my/102203/1/NurFarahNadiaMFS2019.pdf |
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समान संसाधन
-
Structural and optical properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition
द्वारा: Jusoh, Haezah Munyati
प्रकाशित: (2020) -
Development of very high frequency plasma enhanced chemical vapour deposition for nanostructure silicon carbide thin film deposition
द्वारा: Omar, Muhammad Firdaus
प्रकाशित: (2016) -
Comparison of the structural properties of silicon carbide using very high frequency plasma enhanced chemical vapour deposition with magnetron sputtering techniques
द्वारा: Azali, Muhamad Muizzudin
प्रकाशित: (2022) -
Phase change analysis of crystalline silicon thin film grown by very high frequency - plasma enhanced chemical vapour deposition and radio frequency - magnetron sputtering
द्वारा: Rosman, Nor Hariz Kadir
प्रकाशित: (2020) -
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द्वारा: Agung Purniawan, Agung Purniawan
प्रकाशित: (2008)