The morphology and structural properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition

The growth and characterization of silicon carbide (SiC) quantum dots (QDs) are reported in this work. The SiC QDs were grown using plasma enhanced chemical vapour deposition (PECVD) at 150 MHz radio frequency (RF). A mixture of silane (SiH4) and methane (CH4) with a ratio of 1:4 and diluted in hydr...

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Détails bibliographiques
Auteur principal:	Abd. Karim, Nur Farah Nadia
Format:	Thèse
Langue:	anglais
Publié:	2019
Sujets:	Q Science (General)
Accès en ligne:	http://eprints.utm.my/102203/1/NurFarahNadiaMFS2019.pdf

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