Parameter variations of 20NM GAAS junctionless-gate-all-around field-effect transistor with quantum mechanical effects

The scaling down of nanoelectronic device dimension beyond the Moore’s Law era has introduced the use of new material and device architecture of Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET). The use of nanomaterial and advanced device architecture allows the mitigation of the short cha...

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書誌詳細

第一著者:	Mohamad Rasol, Muhammad Faidzal
フォーマット:	学位論文
言語:	英語
出版事項:	2021
主題:	TK Electrical engineering. Electronics Nuclear engineering
オンライン･アクセス:	http://eprints.utm.my/102679/1/MuhammadFaidzalMohamadRasolMSKE2021.pdf.pdf