Simulation, fabrication and characterization of NMOS transistor
This thesis explains the recipe module development for the first Long Channel NMOS transistor device fabrication process at cleanroom laboratory of KUiTTHO. A recipe for the NMOS transistor fabrication process has been successfully produced. Threshold Voltage and Leakage Current, with different cha...
| Main Author: | |
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| Format: | Thesis |
| Language: | English English English |
| Published: |
2006
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| Online Access: | http://eprints.uthm.edu.my/2223/ |
| Abstract | Abstract here |
| _version_ | 1855520498920718336 |
|---|---|
| author | Rifai, Damhuji |
| author_facet | Rifai, Damhuji |
| author_sort | Rifai, Damhuji |
| description | This thesis explains the recipe module development for the first Long
Channel NMOS transistor device fabrication process at cleanroom laboratory of KUiTTHO. A recipe for the NMOS transistor fabrication process has been successfully produced. Threshold Voltage and Leakage Current, with different channel length and oxide gate for the Long Channel NMOS transistor too has been investigated. The data from the experiment conducted have shown that the threshold voltage is more influenced by the thickness of the oxide gate as compared with the
channel length. The threshold voltage increased in linear form with the increase of the oxide gate thickness; and there is almost no change for different channel length. Leakage Current reduces exponentially with the increase of the oxide gate thickness and the channel length. |
| format | Thesis |
| id | uthm-2223 |
| institution | Universiti Tun Hussein Onn Malaysia |
| language | English English English |
| publishDate | 2006 |
| record_format | EPrints |
| record_pdf | Restricted |
| spelling | uthm-22232021-10-31T04:35:06Z http://eprints.uthm.edu.my/2223/ Simulation, fabrication and characterization of NMOS transistor Rifai, Damhuji TK7800-8360 Electronics This thesis explains the recipe module development for the first Long Channel NMOS transistor device fabrication process at cleanroom laboratory of KUiTTHO. A recipe for the NMOS transistor fabrication process has been successfully produced. Threshold Voltage and Leakage Current, with different channel length and oxide gate for the Long Channel NMOS transistor too has been investigated. The data from the experiment conducted have shown that the threshold voltage is more influenced by the thickness of the oxide gate as compared with the channel length. The threshold voltage increased in linear form with the increase of the oxide gate thickness; and there is almost no change for different channel length. Leakage Current reduces exponentially with the increase of the oxide gate thickness and the channel length. 2006-12 Thesis NonPeerReviewed text en http://eprints.uthm.edu.my/2223/1/DAMHUJI%20B.%20RIFAI%20-%20declaration.pdf text en http://eprints.uthm.edu.my/2223/2/DAMHUJI%20B.%20RIFAI%20-%2024p.pdf text en http://eprints.uthm.edu.my/2223/3/DAMHUJI%20B.%20RIFAI%20-%20fulltext.pdf Rifai, Damhuji (2006) Simulation, fabrication and characterization of NMOS transistor. Masters thesis, Universiti Tun Hussein Onn Malaysia. |
| spellingShingle | TK7800-8360 Electronics Rifai, Damhuji Simulation, fabrication and characterization of NMOS transistor |
| thesis_level | Master |
| title | Simulation, fabrication and characterization of NMOS transistor |
| title_full | Simulation, fabrication and characterization of NMOS transistor |
| title_fullStr | Simulation, fabrication and characterization of NMOS transistor |
| title_full_unstemmed | Simulation, fabrication and characterization of NMOS transistor |
| title_short | Simulation, fabrication and characterization of NMOS transistor |
| title_sort | simulation fabrication and characterization of nmos transistor |
| topic | TK7800-8360 Electronics |
| url | http://eprints.uthm.edu.my/2223/ |
| work_keys_str_mv | AT rifaidamhuji simulationfabricationandcharacterizationofnmostransistor |