Structure and electrical properties of gallium arsenide nanowires grown by metal organic chemical vapor deposition

Gallium Arsenide nanowires (GaAs NWs) have been grown on GaAs and Silicon (Si) substrates by gold-assisted and using metal-organic chemical vapor deposition (MOCVD) method. The structural properties and electrical conductivity were studied and was found to be strongly dependent on the pre-annealing...

書誌詳細
第一著者:	Muhammad, Rosnita
フォーマット:	学位論文
言語:	英語
出版事項:	2011
主題:	QD Chemistry
オンライン･アクセス:	http://eprints.utm.my/36942/5/RosnitaMuhammadPFS2011.pdf

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