Structure and electrical properties of gallium arsenide nanowires grown by metal organic chemical vapor deposition

Gallium Arsenide nanowires (GaAs NWs) have been grown on GaAs and Silicon (Si) substrates by gold-assisted and using metal-organic chemical vapor deposition (MOCVD) method. The structural properties and electrical conductivity were studied and was found to be strongly dependent on the pre-annealing...

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书目详细资料

主要作者:	Muhammad, Rosnita
格式:	Thesis
语言:	英语
出版:	2011
主题:	QD Chemistry
在线阅读:	http://eprints.utm.my/36942/5/RosnitaMuhammadPFS2011.pdf