Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process

This project report focuses on the “Design of Low Power 900 MHz Complementary Metal Oxide Semiconductor Voltage Controlled Oscillator For 0.25 µm Process”. It covers the development and characterization of the VCO using Taiwan Semiconductor Manufacturing Company (TSMC) technologies. The main objecti...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखक: Zahari, Muhamad Iskandar
स्वरूप: थीसिस
प्रकाशित: 2014
विषय:
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author Zahari, Muhamad Iskandar
author_facet Zahari, Muhamad Iskandar
author_sort Zahari, Muhamad Iskandar
description This project report focuses on the “Design of Low Power 900 MHz Complementary Metal Oxide Semiconductor Voltage Controlled Oscillator For 0.25 µm Process”. It covers the development and characterization of the VCO using Taiwan Semiconductor Manufacturing Company (TSMC) technologies. The main objective of this project is to design circuit and layout with low power and minimum layout area by applying inductance/capacitance (LC) tank architecture. The VCO on-chip circuit design is capable to perform operation at 900 MHz. The simulation of circuit and layout drawing will be accomplished using Tanner EDA Software Tool. The schematic was drawn using S-EDIT, simulation was done with T_SPICE and layout with L-EDIT. Low power saving design technique at IDLE is introduced by “powersave” terminal from power management block (not covered in this project). The power reduction technique reduces power from milliwatt range to nanowatt range at typical condition. The design was optimized to meet specifications for mobile device applications
format Thesis
id uthm-48396
institution Universiti Teknologi Malaysia
publishDate 2014
record_format eprints
spelling uthm-483962017-08-07T01:09:21Z http://eprints.utm.my/48396/ Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process Zahari, Muhamad Iskandar TJ Mechanical engineering and machinery This project report focuses on the “Design of Low Power 900 MHz Complementary Metal Oxide Semiconductor Voltage Controlled Oscillator For 0.25 µm Process”. It covers the development and characterization of the VCO using Taiwan Semiconductor Manufacturing Company (TSMC) technologies. The main objective of this project is to design circuit and layout with low power and minimum layout area by applying inductance/capacitance (LC) tank architecture. The VCO on-chip circuit design is capable to perform operation at 900 MHz. The simulation of circuit and layout drawing will be accomplished using Tanner EDA Software Tool. The schematic was drawn using S-EDIT, simulation was done with T_SPICE and layout with L-EDIT. Low power saving design technique at IDLE is introduced by “powersave” terminal from power management block (not covered in this project). The power reduction technique reduces power from milliwatt range to nanowatt range at typical condition. The design was optimized to meet specifications for mobile device applications 2014 Thesis NonPeerReviewed Zahari, Muhamad Iskandar (2014) Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process. Masters thesis, Universiti Teknologi Malaysia, Faculty of Electrical Engineering.
spellingShingle TJ Mechanical engineering and machinery
Zahari, Muhamad Iskandar
Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
title Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
title_full Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
title_fullStr Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
title_full_unstemmed Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
title_short Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
title_sort design of low power 900mhz complementary metal oxide semiconductor voltage controlled oscillator for 0 25 µm process
topic TJ Mechanical engineering and machinery
url-record http://eprints.utm.my/48396/
work_keys_str_mv AT zaharimuhamadiskandar designoflowpower900mhzcomplementarymetaloxidesemiconductorvoltagecontrolledoscillatorfor025μmprocess