Anthony Hasbi, H. (2005). Structural properties of hydrogenated amorphous silicon (A-SI: H) thin film grown via radio frequency plasma enhanced chemical vapor deposition (RF PECVD).
Style de citation Chicago (17e éd.)Anthony Hasbi, Hasbullah. Structural Properties of Hydrogenated Amorphous Silicon (A-SI: H) Thin Film Grown via Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD). 2005.
Style de citation MLA (9e éd.)Anthony Hasbi, Hasbullah. Structural Properties of Hydrogenated Amorphous Silicon (A-SI: H) Thin Film Grown via Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD). 2005.
Attention : ces citations peuvent ne pas être correctes à 100%.