Structural properties of hydrogenated amorphous silicon (A-SI:H) thin film grown via radio frequency plasma enhanced chemical vapor deposition (RF PECVD)
An investigation of the structural properties of hydrogenated amorphous silicon (a-Si:H) thin films prepared by plasma enhanced chemical vapour deposition of silane (SiH4) was done using a combination of atomic force microscopy (AFM), photoluminescence, infrared and UV spectroscopy. Films were prepa...
| मुख्य लेखक: | Anthony Hasbi, Hasbullah |
|---|---|
| स्वरूप: | थीसिस |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
2005
|
| विषय: | |
| ऑनलाइन पहुंच: | http://eprints.utm.my/5093/1/HasbullahAnthonyHasbiMFS2005.pdf |
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समान संसाधन
-
The structural and optical properties of hydrogenated amorphous carbon (a-C:H) thin films deposited using a direct current-plasma enhanced chemical vapour deposition (DC-PECVD) technique
द्वारा: Abu Bakar, Suriani
प्रकाशित: (2005) -
Structural and optical properties of nanocrystalline silicon thin films grown by 150MHz VHF-PECVD
द्वारा: Tarjudin, Nurul Aini
प्रकाशित: (2012) -
Characterization of amorphous silicon-carbon alloy films (a-Si:C:H)
द्वारा: Lau, Chen Chen
प्रकाशित: (2005) -
Study Of Gan Low Dimensional Structures On Silicon Substrates Grown By Thermal Vapor Deposition For Photodiode And Solar Cell Applications
द्वारा: Abdelrahman, Kamaleldin Mohamed Abdalla
प्रकाशित: (2014) -
Phase change analysis of crystalline silicon thin film grown by very high frequency - plasma enhanced chemical vapour deposition and radio frequency - magnetron sputtering
द्वारा: Rosman, Nor Hariz Kadir
प्रकाशित: (2020)