Structural properties of hydrogenated amorphous silicon (A-SI:H) thin film grown via radio frequency plasma enhanced chemical vapor deposition (RF PECVD)
An investigation of the structural properties of hydrogenated amorphous silicon (a-Si:H) thin films prepared by plasma enhanced chemical vapour deposition of silane (SiH4) was done using a combination of atomic force microscopy (AFM), photoluminescence, infrared and UV spectroscopy. Films were prepa...
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| フォーマット: | 学位論文 |
| 言語: | 英語 |
| 出版事項: |
2005
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| オンライン･アクセス: | http://eprints.utm.my/5093/1/HasbullahAnthonyHasbiMFS2005.pdf |