Characterisation of ballistic carbon nanotube field-effect transistor
Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the perfonnance of silicon transistor with reduction of its size. However, the scaling process will eventually reaches its limit and by that time a new group of devices are expected to replace MOSFET...
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| Format: | Thèse |
| Langue: | anglais |
| Publié: |
2005
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| Accès en ligne: | http://eprints.uthm.edu.my/7727/ |
| Abstract | Abstract here |
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Characterisation of ballistic carbon nanotube field-effect transistor
Publié 2005
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Universiti Tun Hussein Onn Malaysia