Aluminium nitride (AlN) as buffer layer for deposition of gallium nitride (GaN) thin films on silicon substrates using magnetron sputtering technique

Group III-nitrides semiconductors composed of gallium nitride (GaN), Indium nitride (InN), and aluminium nitride (AlN) had found use in broad technologies especially in optoelectronic and power devices. The main issues that limit the performance of GaN-based ultraviolet light-emitting diodes (UV-LED...

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Bibliographic Details
Main Author:	Tahan, Muliana
Format:	Thesis
Language:	English English English
Published:	2021
Subjects:	TK2896-2985 Production of electricity by direct energy conversion
Online Access:	http://eprints.uthm.edu.my/989/
Abstract	Abstract here

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