Abd. Hamid, F. K. (2020). Explicit charge-based model for strained-silicon gate-all-around mosfet including quantum and short channel effects.
शिकागो शैली (17वां संस्करण) प्रशस्ति पत्रAbd. Hamid, Fatimah Khairiah. Explicit Charge-based Model for Strained-silicon Gate-all-around Mosfet Including Quantum and Short Channel Effects. 2020.
एमएलए (9वां संस्करण) प्रशस्ति पत्रAbd. Hamid, Fatimah Khairiah. Explicit Charge-based Model for Strained-silicon Gate-all-around Mosfet Including Quantum and Short Channel Effects. 2020.
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