Explicit charge-based model for strained-silicon gate-all-around mosfet including quantum and short channel effects

In the recent development of advanced nanoelectronic devices, strain application on silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been identified as a key factor towards the improvement of device performance. Strainedsilicon is preferred due to less impact of the short chann...

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Bibliographic Details

Main Author:	Abd. Hamid, Fatimah Khairiah
Format:	Thesis
Language:	English
Published:	2020
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/99521/1/FatimahKhairiahAbdPSKE2020.pdf.pdf