Modeling the schottky barrier properties of graphene nanoribbon schottky diode

Also available in printed version : TK7871.89.S35 W66 2014 raf

Bibliographic Details
Main Author: Wong, King Kiat
Other Authors: Razali Ismail, supervisor
Format: Master's thesis
Published: Universiti Teknologi Malaysia 2025
Subjects:
Online Access:https://utmik.utm.my/handle/123456789/101694
Abstract Abstract here
_version_ 1854975039138430976
author Wong, King Kiat
author2 Razali Ismail, supervisor
author_facet Razali Ismail, supervisor
Wong, King Kiat
author_sort Wong, King Kiat
description Also available in printed version : TK7871.89.S35 W66 2014 raf
format Master's thesis
id utm-123456789-101694
institution Universiti Teknologi Malaysia
publishDate 2025
publisher Universiti Teknologi Malaysia
record_format dspace
record_pdf Abstract
spelling utm-123456789-1016942025-08-20T15:35:39Z Modeling the schottky barrier properties of graphene nanoribbon schottky diode Wong, King Kiat Razali Ismail, supervisor Diodes, Schottky-barrier Also available in printed version : TK7871.89.S35 W66 2014 raf The increasing demand for small sized, low power consumption and high processing speeds have always been the pillars of transistor development. To meet the demands of the transistor, the current trend is to reduce the size of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) into nanoscale regime because size plays an essential role in the performance of transistors. However, the extreme scaling of the size has brought new challenges as the MOSFET reaches its performance limit. In this respect, the Graphene Nanoribbon (GNR), a promising material that holds much potential for the future nanoelectronic devices, is introduced as a new material to overcome the limitation that exists in the conventional MOSFET. In this research, the analytical model of the GNR Schottky diode was presented to analyse the behaviour of metal-GNR interface. The work presents a simple model to analyse the current-voltage characteristic in the function of Schottky barrier properties such as the potential barrier and the Schottky barrier lowering effect of GNR contact. By using the analytical method, the analytical model for depletion region width, potential barrier, Schottky barrier lowering effect and the current-voltage characteristics of the GNR Schottky diode were presented. Besides that, the device structure of the GNR Schottky diode was built using Atomic Toolkit Virtual Nano Lab software to analyse the edge effect of metal-GNR interface. Based on the results, it is found that the potential barrier of GNR contacts is lower than conventional silicon contacts by at least half of it and the metal-Zigzag GNR interface shows promising potential to become interconnect as the interface is able to carry high current density up to 109 A/cm2. In addition, the proposed current-voltage characteristics model of GNR Schottky diode shows good agreement with experimental data and also with ATK Tools Simulation result atiff UTM 126 p. Thesis (Sarjana Kejuruteraan (Elektrik)) - Universiti Teknologi Malaysia, 2014 2025-04-10T04:53:59Z 2025-04-10T04:53:59Z 2014 Master's thesis https://utmik.utm.my/handle/123456789/101694 valet-20160324-174114 vital:85429 Closed Access UTM Complete Unpublished application/pdf Universiti Teknologi Malaysia
spellingShingle Diodes, Schottky-barrier
Wong, King Kiat
Modeling the schottky barrier properties of graphene nanoribbon schottky diode
thesis_level Master
title Modeling the schottky barrier properties of graphene nanoribbon schottky diode
title_full Modeling the schottky barrier properties of graphene nanoribbon schottky diode
title_fullStr Modeling the schottky barrier properties of graphene nanoribbon schottky diode
title_full_unstemmed Modeling the schottky barrier properties of graphene nanoribbon schottky diode
title_short Modeling the schottky barrier properties of graphene nanoribbon schottky diode
title_sort modeling the schottky barrier properties of graphene nanoribbon schottky diode
topic Diodes, Schottky-barrier
url https://utmik.utm.my/handle/123456789/101694
work_keys_str_mv AT wongkingkiat modelingtheschottkybarrierpropertiesofgraphenenanoribbonschottkydiode