Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors

Also available in printed version

Détails bibliographiques
Auteur principal: Chin, Huei Chaeng
Autres auteurs: Tan, Michael Loong Peng, supervisor
Format: Master's thesis
Publié: Universiti Teknologi Malaysia 2025
Sujets:
Accès en ligne:https://utmik.utm.my/handle/123456789/102120
Abstract Abstract here
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author Chin, Huei Chaeng
author2 Tan, Michael Loong Peng, supervisor
author_facet Tan, Michael Loong Peng, supervisor
Chin, Huei Chaeng
author_sort Chin, Huei Chaeng
description Also available in printed version
format Master's thesis
id utm-123456789-102120
institution Universiti Teknologi Malaysia
publishDate 2025
publisher Universiti Teknologi Malaysia
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record_pdf Abstract
spelling utm-123456789-1021202025-08-20T15:43:09Z Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors Chin, Huei Chaeng Tan, Michael Loong Peng, supervisor Electrical engineering Also available in printed version In today's era, all aspects of complex occupational task, plus the importance of early identification of developmental disorders in children, demand the essential need for screening children’s handwriting at elementary schools. Many underlying competence structures may interfere with handwriting performance. Children starting their academic programme should be tested for their handwriting abilities and readiness through regular routine screening. Screening a vast majority of 4 to 7+ years old necessitate the use of automated systems to collect data, keep tracks, and increase the speed of analysis and accuracy. Based on Handwriting Proficiency Screening Questionnaire (HSPQ) evaluated by their teachers, 120 pupils were individually tested on their use o f graphic production rules. Then, the samples were divided into two group of writers; below average writers (test group) and above average writers (control group) based on the score of HSPQ. Each participant was required to copy four basic lines in two opposite directions and trace a sequence of rotated semi circles. This research examines the dynamic features such as ratio of time taken and standard deviation of pen pressure. In this study, three classification methods: Artificial Neural Network, Logistic Regression and Support Vector Machine (SVM) were chosen to classify children with handwriting problem. 10-fold cross-validation method is used for testing and training. At the end of this study, the results among these classifiers and features were compared. Based on the results, it can be concluded that the performance o f SVM with Radial Basis Function kernel is the best among classifiers as it gives 100% of screening accuracy atiff UTM 115 p. Thesis (Sarjana Kejuruteraan (Elektrik)) - Universiti Teknologi Malaysia, 2015 2025-04-10T05:07:23Z 2025-04-10T05:07:23Z 2015 Master's thesis https://utmik.utm.my/handle/123456789/102120 valet-20160411-14218 vital:86145 Closed Access UTM Complete Unpublished application/pdf Universiti Teknologi Malaysia
spellingShingle Electrical engineering
Chin, Huei Chaeng
Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors
thesis_level Master
title Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors
title_full Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors
title_fullStr Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors
title_full_unstemmed Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors
title_short Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors
title_sort modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field effect transistors
topic Electrical engineering
url https://utmik.utm.my/handle/123456789/102120
work_keys_str_mv AT chinhueichaeng modelingtheeffectsofphononscatteringincarbonnanotubeandsiliconnanowirefieldeffecttransistors