Electrical Analysis of Si3N4 Stress in Sub-90nm NMOS Device.

ABDULLAH, MOHD HANAPIAH BIN (2008) Electrical Analysis of Si3N4 Stress in Sub-90nm NMOS Device. In: UNSPECIFIED.

Full text not available from this repository.

Metadata

Item Type:	Conference or Workshop Item (UNSPECIFIED)
PRISMA ID:	8605
URI:	http://oarr.uitm.edu.my/id/eprint/19844

Actions (login required)

View Item

Citation