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Band Gap Shift Due to Nitrogen Doping, Microwave Power and Gas Pressure of a-C Thin Films Deposited by Microwave Surface Wave Plasma CVD

MAHMOOD, MOHAMAD RUSOP BIN (2004) Band Gap Shift Due to Nitrogen Doping, Microwave Power and Gas Pressure of a-C Thin Films Deposited by Microwave Surface Wave Plasma CVD. In: UNSPECIFIED.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
PRISMA ID: 29902
URI: http://oarr.uitm.edu.my/id/eprint/27598

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