Effect of single event upset on 6T and 12T static random access memory for different CMOS technologies

Static random access memory cells (SRAMs) are high-speed semiconductor memory that uses a flip-flop to store each bit. Almost four decades ago, the effect of radiation on this high-speed semiconductor device was discovered when the first satellite experienced serious issues caused by the high-energy...

وصف كامل

التفاصيل البيبلوغرافية

المؤلف الرئيسي:	Nur Syafiqah binti Yusop
مؤلفون آخرون:	#PLACEHOLDER_PARENT_METADATA_VALUE#
التنسيق:	Master Thesis
اللغة:	الإنجليزية
منشور في:	Kuala Lumpur :International Islamic University Malaysia,2017 2024
الموضوعات:	Static random access memory Metal oxide semiconductors, Complementary
الوصول للمادة أونلاين:	https://studentrepo.iium.edu.my/handle/123456789/7488 https://lib.iium.edu.my/mom/services/mom/document/getFile/RWcrtin04QEdagMBDKLcwbWvUKLuySJs20180410115705444
Abstract	Abstract here