Design and analysis of vertical strained impact ionization mosfet incorporating dielectric pocket (VESIMOS-PD)
CMOS device scaling faces several fundamental limits as it scaled beyond the sub- 30nm regime. Non-scalability of the subthreshold slope (S) and adverse short channel effects degrading the current drivability and electron mobility of a MOSFET. An innovative device structure with appropriate device p...
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| Format: | Thesis |
| Language: | English English |
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2014
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| Online Access: | https://eprints.ums.edu.my/id/eprint/43502/1/24%20PAGES.pdf https://eprints.ums.edu.my/id/eprint/43502/2/FULLTEXT.pdf https://eprints.ums.edu.my/id/eprint/43502/ |
| Abstract | Abstract here |