Statistical Modelling And Optimization Of Input Process Parameters Variations In Silicon-On-Insulator MOSFET Device

The steady miniaturization of the conventional (planar bulk) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been effective in providing continual improvements in integrated circuit performance. However, increased leakage current and variability in transistor performance are the major...

書誌詳細
第一著者:	Abd Aziz, Muhammad Nazirul Ifwat
フォーマット:	学位論文
言語:	英語英語
出版事項:	2017
主題:	T Technology (General) TK Electrical engineering. Electronics Nuclear engineering
オンライン･アクセス:	http://eprints.utem.edu.my/id/eprint/23714/1/Statistical%20Modelling%20And%20Optimization%20Of%20Input%20Process%20Parameters%20Variations%20In%20Silicon-On-Insulator%20MOSFET%20Device.pdf http://eprints.utem.edu.my/id/eprint/23714/2/Statistical%20Modelling%20And%20Optimization%20Of%20Input%20Process%20Parameters%20Variations%20In%20Silicon-On-Insulator%20MOSFET%20Device.pdf

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