Statistical Modelling And Optimization Of Input Process Parameters Variations In Silicon-On-Insulator MOSFET Device

The steady miniaturization of the conventional (planar bulk) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been effective in providing continual improvements in integrated circuit performance. However, increased leakage current and variability in transistor performance are the major...

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Bibliographic Details
Main Author:	Abd Aziz, Muhammad Nazirul Ifwat
Format:	Thesis
Language:	English English
Published:	2017
Subjects:	T Technology (General) TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utem.edu.my/id/eprint/23714/1/Statistical%20Modelling%20And%20Optimization%20Of%20Input%20Process%20Parameters%20Variations%20In%20Silicon-On-Insulator%20MOSFET%20Device.pdf http://eprints.utem.edu.my/id/eprint/23714/2/Statistical%20Modelling%20And%20Optimization%20Of%20Input%20Process%20Parameters%20Variations%20In%20Silicon-On-Insulator%20MOSFET%20Device.pdf

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