Statistical Modelling And Optimization Of Input Process Parameters Variations In Silicon-On-Insulator MOSFET Device

The steady miniaturization of the conventional (planar bulk) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been effective in providing continual improvements in integrated circuit performance. However, increased leakage current and variability in transistor performance are the major...

وصف كامل

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Abd Aziz, Muhammad Nazirul Ifwat
التنسيق:	أطروحة
اللغة:	الإنجليزية الإنجليزية
منشور في:	2017
الموضوعات:	T Technology (General) TK Electrical engineering. Electronics Nuclear engineering
الوصول للمادة أونلاين:	http://eprints.utem.edu.my/id/eprint/23714/1/Statistical%20Modelling%20And%20Optimization%20Of%20Input%20Process%20Parameters%20Variations%20In%20Silicon-On-Insulator%20MOSFET%20Device.pdf http://eprints.utem.edu.my/id/eprint/23714/2/Statistical%20Modelling%20And%20Optimization%20Of%20Input%20Process%20Parameters%20Variations%20In%20Silicon-On-Insulator%20MOSFET%20Device.pdf

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