Statistical Modelling And Optimization Of Input Process Parameters Variations In Silicon-On-Insulator MOSFET Device

The steady miniaturization of the conventional (planar bulk) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been effective in providing continual improvements in integrated circuit performance. However, increased leakage current and variability in transistor performance are the major...

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Détails bibliographiques
Auteur principal:	Abd Aziz, Muhammad Nazirul Ifwat
Format:	Thèse
Langue:	anglais anglais
Publié:	2017
Sujets:	T Technology (General) TK Electrical engineering. Electronics Nuclear engineering
Accès en ligne:	http://eprints.utem.edu.my/id/eprint/23714/1/Statistical%20Modelling%20And%20Optimization%20Of%20Input%20Process%20Parameters%20Variations%20In%20Silicon-On-Insulator%20MOSFET%20Device.pdf http://eprints.utem.edu.my/id/eprint/23714/2/Statistical%20Modelling%20And%20Optimization%20Of%20Input%20Process%20Parameters%20Variations%20In%20Silicon-On-Insulator%20MOSFET%20Device.pdf

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