Statistical Modelling And Optimization Of Input Process Parameters Variations In Silicon-On-Insulator MOSFET Device

The steady miniaturization of the conventional (planar bulk) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been effective in providing continual improvements in integrated circuit performance. However, increased leakage current and variability in transistor performance are the major...

書目詳細資料
主要作者:	Abd Aziz, Muhammad Nazirul Ifwat
格式:	Thesis
語言:	英语英语
出版:	2017
主題:	T Technology (General) TK Electrical engineering. Electronics Nuclear engineering
在線閱讀:	http://eprints.utem.edu.my/id/eprint/23714/1/Statistical%20Modelling%20And%20Optimization%20Of%20Input%20Process%20Parameters%20Variations%20In%20Silicon-On-Insulator%20MOSFET%20Device.pdf http://eprints.utem.edu.my/id/eprint/23714/2/Statistical%20Modelling%20And%20Optimization%20Of%20Input%20Process%20Parameters%20Variations%20In%20Silicon-On-Insulator%20MOSFET%20Device.pdf

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