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Modelling Of Wire Bonding Cu-Al Intermetallic Formation Growth Towards Interfacial Stress

Quality requirement in the semiconductor industry is getting more stringent due to the application of semiconductor components that are widely used in automotive. Furthermore different materials combination is being introduced to semiconductor packages to improve their package performance and reduce...

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Détails bibliographiques
Auteur principal: Lee, Cher Chia
Format: Thèse
Langue:anglais
anglais
Publié: UTeM 2017
Sujets:
T Technology (General)
TS Manufactures
Accès en ligne:http://eprints.utem.edu.my/id/eprint/23786/1/Modelling%20Of%20Wire%20Bonding%20Cu-Al%20Intermetallic%20Formation%20Growth%20Towards%20Interfacial%20Stress%20-%20Lee%20Cher%20Chia%20-%2024%20Pages.pdf
http://eprints.utem.edu.my/id/eprint/23786/2/Modelling%20Of%20Wire%20Bonding%20Cu-Al%20Intermetallic%20Formation%20Growth%20Towards%20Interfacial%20Stress.pdf
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http://eprints.utem.edu.my/id/eprint/23786/1/Modelling%20Of%20Wire%20Bonding%20Cu-Al%20Intermetallic%20Formation%20Growth%20Towards%20Interfacial%20Stress%20-%20Lee%20Cher%20Chia%20-%2024%20Pages.pdf
http://eprints.utem.edu.my/id/eprint/23786/2/Modelling%20Of%20Wire%20Bonding%20Cu-Al%20Intermetallic%20Formation%20Growth%20Towards%20Interfacial%20Stress.pdf

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