Modeling and simulation of single and double gates ion sensitive field effect transistor for biomedical applications

The modeling of Ion Sensitive Field Effect Transistor (ISFET) generally starts with its analogy to MOS devices and its threshold dependence on pH. Massobrio et al. proposed a macro-model plug in for SPICE. It was later modified to fit general SPICE based simulators without the need for a plug-in sof...

Description complète

Détails bibliographiques

Auteur principal:	Dinar, Ahmed Musa
Format:	Thèse
Langue:	anglais anglais
Publié:	2020
Sujets:	T Technology (General) TK Electrical engineering. Electronics Nuclear engineering
Accès en ligne:	http://eprints.utem.edu.my/id/eprint/25424/1/Modeling%20And%20Simulation%20Of%20Single%20And%20Double%20Gates%20Ion%20Sensitive%20Field%20Effect%20Transistor%20For%20Biomedical%20Applications.pdf http://eprints.utem.edu.my/id/eprint/25424/2/Modeling%20And%20Simulation%20Of%20Single%20And%20Double%20Gates%20Ion%20Sensitive%20Field%20Effect%20Transistor%20For%20Biomedical%20Applications.pdf