Plasma etching process for aluminum-copper metallization by photoresist margin improvement for CMOS 0.13-µm technology
In wafer fabrication manufacturing, the aluminum etching process is a dry plasma etching process used as the main process for construction of aluminum copper (AlCu) interconnect structures. As customer requirements changed for faster, more reliable and lower cost chips, chip manufacturers have learn...
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | أطروحة |
| اللغة: | الإنجليزية الإنجليزية |
| منشور في: |
2022
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://eprints.utem.edu.my/id/eprint/26870/1/Plasma%20etching%20process%20for%20aluminum-copper%20metallization%20by%20photoresist%20margin%20improvement%20for%20CMOS%200.13-%C2%B5m%20technology.pdf http://eprints.utem.edu.my/id/eprint/26870/2/Plasma%20etching%20process%20for%20aluminum-copper%20metallization%20by%20photoresist%20margin%20improvement%20for%20CMOS%200.13-%C2%B5m%20technology.pdf |
الانترنت
http://eprints.utem.edu.my/id/eprint/26870/1/Plasma%20etching%20process%20for%20aluminum-copper%20metallization%20by%20photoresist%20margin%20improvement%20for%20CMOS%200.13-%C2%B5m%20technology.pdfhttp://eprints.utem.edu.my/id/eprint/26870/2/Plasma%20etching%20process%20for%20aluminum-copper%20metallization%20by%20photoresist%20margin%20improvement%20for%20CMOS%200.13-%C2%B5m%20technology.pdf