Plasma etching process for aluminum-copper metallization by photoresist margin improvement for CMOS 0.13-µm technology

In wafer fabrication manufacturing, the aluminum etching process is a dry plasma etching process used as the main process for construction of aluminum copper (AlCu) interconnect structures. As customer requirements changed for faster, more reliable and lower cost chips, chip manufacturers have learn...

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Auteur principal:	Mohamed Hassan, Wan Faizal
Format:	Thèse
Langue:	anglais anglais
Publié:	2022
Sujets:	T Technology (General) TK Electrical engineering. Electronics Nuclear engineering
Accès en ligne:	http://eprints.utem.edu.my/id/eprint/26870/1/Plasma%20etching%20process%20for%20aluminum-copper%20metallization%20by%20photoresist%20margin%20improvement%20for%20CMOS%200.13-%C2%B5m%20technology.pdf http://eprints.utem.edu.my/id/eprint/26870/2/Plasma%20etching%20process%20for%20aluminum-copper%20metallization%20by%20photoresist%20margin%20improvement%20for%20CMOS%200.13-%C2%B5m%20technology.pdf