Design and analysis of 22 nm DG-MOSFET with high-k metal gate graphene structure for better current performance
One of the innovations with the unique properties of graphene, which is frequently a complementary material of today's advanced materials technology, is the design process for the virtual fabrication of double layer graphene MOSFET 22 nm with high-k metal gate (HKMG). Aggressive scaling of MOSF...
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| Format: | Thesis |
| Language: | English English |
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2024
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| Online Access: | http://eprints.utem.edu.my/id/eprint/28370/1/Design%20and%20analysis%20of%2022%20nm%20DG-MOSFET%20with%20high-k%20metal%20gate%20graphene%20structure%20for%20better%20current%20performance.pdf http://eprints.utem.edu.my/id/eprint/28370/2/Design%20and%20analysis%20of%2022%20nm%20DG-MOSFET%20with%20high-k%20metal%20gate%20graphene%20structure%20for%20better%20current%20performance.pdf |
Internet
http://eprints.utem.edu.my/id/eprint/28370/1/Design%20and%20analysis%20of%2022%20nm%20DG-MOSFET%20with%20high-k%20metal%20gate%20graphene%20structure%20for%20better%20current%20performance.pdfhttp://eprints.utem.edu.my/id/eprint/28370/2/Design%20and%20analysis%20of%2022%20nm%20DG-MOSFET%20with%20high-k%20metal%20gate%20graphene%20structure%20for%20better%20current%20performance.pdf