Fabrication and simulation of lithographically defined junctionless lateral gate silicon nanowire transistors
Nowadays most of the industrial technology in fabrication of transistors is based on the use of semiconductor junctions. Because of the laws of diffusion and the statistical nature of the distribution of the doping atoms in the semiconductor, the formation of ultra-shallow junctions with high doping...
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| フォーマット: | 学位論文 |
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2012
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