Design of silicon nitride metal-insulator-metal capacitor using 0.15 um gallium arsenide technology
Generally there are two groups of devices in GaAs technology, which are active and passive devices. Passive devices commonly used in GaAs are resistor, capacitor, inductor and transmission lines. This research work only focus on MIM capacitor device. The aim of this research work is to design and de...
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| フォーマット: | 学位論文 |
| 言語: | 英語 |
| 出版事項: |
2010
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| 主題: | |
| オンライン･アクセス: | http://psasir.upm.edu.my/id/eprint/41144/7/FK%202010%2079R.pdf |