APA(7版)引用形式

Sanusi, R. (2010). Design of silicon nitride metal-insulator-metal capacitor using 0.15 um gallium arsenide technology.

Chicagoスタイル(17版)引用形式

Sanusi, Rasidah. Design of Silicon Nitride Metal-insulator-metal Capacitor Using 0.15 Um Gallium Arsenide Technology. 2010.

MLA(9版)引用形式

Sanusi, Rasidah. Design of Silicon Nitride Metal-insulator-metal Capacitor Using 0.15 Um Gallium Arsenide Technology. 2010.

警告: この引用は必ずしも正確ではありません.