Sanusi, R. (2010). Design of silicon nitride metal-insulator-metal capacitor using 0.15 um gallium arsenide technology.
Style de citation Chicago (17e éd.)Sanusi, Rasidah. Design of Silicon Nitride Metal-insulator-metal Capacitor Using 0.15 Um Gallium Arsenide Technology. 2010.
Style de citation MLA (9e éd.)Sanusi, Rasidah. Design of Silicon Nitride Metal-insulator-metal Capacitor Using 0.15 Um Gallium Arsenide Technology. 2010.
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