APA引文

Sanusi, R. (2010). Design of silicon nitride metal-insulator-metal capacitor using 0.15 um gallium arsenide technology.

Chicago Style (17th ed.) Citation

Sanusi, Rasidah. Design of Silicon Nitride Metal-insulator-metal Capacitor Using 0.15 Um Gallium Arsenide Technology. 2010.

MLA引文

Sanusi, Rasidah. Design of Silicon Nitride Metal-insulator-metal Capacitor Using 0.15 Um Gallium Arsenide Technology. 2010.

警告：這些引文格式不一定是100％准確.