Sanusi, R. (2010). Design of silicon nitride metal-insulator-metal capacitor using 0.15 um gallium arsenide technology.
芝加哥风格引文Sanusi, Rasidah. Design of Silicon Nitride Metal-insulator-metal Capacitor Using 0.15 Um Gallium Arsenide Technology. 2010.
MLA引文Sanusi, Rasidah. Design of Silicon Nitride Metal-insulator-metal Capacitor Using 0.15 Um Gallium Arsenide Technology. 2010.
警告：这些引文格式不一定是100％准确.