Design of silicon nitride metal-insulator-metal capacitor using 0.15 um gallium arsenide technology

Generally there are two groups of devices in GaAs technology, which are active and passive devices. Passive devices commonly used in GaAs are resistor, capacitor, inductor and transmission lines. This research work only focus on MIM capacitor device. The aim of this research work is to design and de...

書目詳細資料
主要作者:	Sanusi, Rasidah
格式:	Thesis
語言:	英语
出版:	2010
主題:	Gallium arsenide Silicon nitride Capacitors - Design and construction
在線閱讀:	http://psasir.upm.edu.my/id/eprint/41144/7/FK%202010%2079R.pdf

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