Formation of ZrO2 gate dielectric on Ge substrate by thermal oxidation and post annealing for metal-oxide-semiconductor devices / Lei Zhen Ce
Sputtered pure zirconium (Zr) metal films on germanium (Ge) substrates were thermally oxidized/nitrided at various temperatures (300 – 800 °C) for 15 minutes. Furthermore, some of the samples performed post oxidation annealing at various temperatures (400 – 800 °C). Effects of thermal oxidation/nitr...
| المؤلف الرئيسي: | |
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| التنسيق: | أطروحة |
| منشور في: |
2019
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| الموضوعات: |