High quality single-crystalline aluminum nitride grown using pulsed atomic-layer Epitaxy technique by MOCVD on sapphire substrate / Mohd Nazri Abd Rahman
The unique structural properties and engineering characteristics of nitride-based materials have given them a special position in semiconductor applications. Alloys with a tuned energy bandgap from ultraviolet to infrared wavelengths are possible to be deposited in maintaining the wurtzite crystal s...
| मुख्य लेखक: | |
|---|---|
| स्वरूप: | थीसिस |
| प्रकाशित: |
2021
|
| विषय: |