High quality single-crystalline aluminum nitride grown using pulsed atomic-layer Epitaxy technique by MOCVD on sapphire substrate / Mohd Nazri Abd Rahman
The unique structural properties and engineering characteristics of nitride-based materials have given them a special position in semiconductor applications. Alloys with a tuned energy bandgap from ultraviolet to infrared wavelengths are possible to be deposited in maintaining the wurtzite crystal s...
| 第一著者: | |
|---|---|
| フォーマット: | 学位論文 |
| 出版事項: |
2021
|
| 主題: |