Epitaxial growth of semi-polar (11-22) gallium nitride FOR UV photosensing application / Abdullah Haaziq Ahmad Makinudin

Semi-polar (11-22) gallium nitride (GaN) epilayers have attracted numerous interests in GaN based technology as it possess significant advantages over its polar (c-plane) counterparts such as low to none spontaneous and piezoelectric polarization which is known to impair the device performance. Howe...

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Bibliographic Details
Main Author:	Abdullah Haaziq , Ahmad Makinudin
Format:	Thesis
Published:	2020
Subjects:	Q Science (General) QC Physics

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