Dual-band Doherty power amplifier with the improvement of reactance compensation technique for LTE frequency operations / Yu Li Ming
A dual-band selection of Doherty power amplifier employing a Reactance Compensation Technique (RCT) with Gallium Nitride High-Electron-Mobility-Transistor (GaN HEMT) technology is presented. In this dissertation, the focus has been given to the design power amplifier in Doherty configuration, where...
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | أطروحة |
| منشور في: |
2021
|
| الموضوعات: |