Dual-band Doherty power amplifier with the improvement of reactance compensation technique for LTE frequency operations / Yu Li Ming

A dual-band selection of Doherty power amplifier employing a Reactance Compensation Technique (RCT) with Gallium Nitride High-Electron-Mobility-Transistor (GaN HEMT) technology is presented. In this dissertation, the focus has been given to the design power amplifier in Doherty configuration, where...

書誌詳細
第一著者:	Yu , Li Ming
フォーマット:	学位論文
出版事項:	2021
主題:	TA Engineering (General). Civil engineering (General) TK Electrical engineering. Electronics Nuclear engineering

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