Dual-band Doherty power amplifier with the improvement of reactance compensation technique for LTE frequency operations / Yu Li Ming
A dual-band selection of Doherty power amplifier employing a Reactance Compensation Technique (RCT) with Gallium Nitride High-Electron-Mobility-Transistor (GaN HEMT) technology is presented. In this dissertation, the focus has been given to the design power amplifier in Doherty configuration, where...
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| フォーマット: | 学位論文 |
| 出版事項: |
2021
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