Samarium oxide and samarium oxynitride thin film gate oxides on silicon substrate / Goh Kian Heng
Sputtered pure samarium (Sm) metal films on silicon substrates were thermally oxidized and oxynitrided at various temperatures (600 – 900 °C) and durations (5 – 20 min). Effects of thermal oxidation ambient in oxygen (O2) and nitrous oxide (N2O) gas ambient on the physical and electrical properti...
| मुख्य लेखक: | |
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| स्वरूप: | थीसिस |
| प्रकाशित: |
2017
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| विषय: |