Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai

The InGaN/GaN multi-quantum wells, growth on bulk GaN substrate were studied for blue light emission via metal-organic chemical vapor deposition (MOCVD). The homoepitaxy growth of GaN-on-GaN gives an unprecedented high performance with low defect density, high-quality crystal, simplified LED arch...

وصف كامل

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Sivanathan , Pariasamy @ Chelladurai
التنسيق:	أطروحة
منشور في:	2018
الموضوعات:	Q Science (General)

مواد مشابهة

Growth and properties of polar and non-polar InGaN/GaN LEDS on patterned and M-plane sapphire substrates / Mohd Adreen Shah Azman Shah
حسب: Mohd Adreen Shah , Azman Shah
منشور في: (2022)

Optimization of AlN/GaN strained-layer superlattice for GaN epitaxy on Si(111) substrate / Yusnizam Yusuf
حسب: Yusnizam, Yusuf
منشور في: (2017)

Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
حسب: Kamarulzaman, Azharul Ariff
منشور في: (2017)

Crystal quality enhancement of semi-polar (11 22) InGaN/GaN-based LED grown on M-Plane sapphire substrate via MOCVD / Omar Ayad Fadhil
حسب: Omar Ayad , Fadhil
منشور في: (2019)

PA-MBE GaN-Based Optoelectronics on Silicon Substrates
حسب: Chuah , Lee Siang
منشور في: (2009)

Growth of non-polar (11-20) a-plane GaN based leds grown on (1-120) r-plane sapphire substrate via MOCVD / Anas Kamarundzaman
حسب: Anas , Kamarundzaman
منشور في: (2022)

In-depth study of semipolar (11-22) InGaN/GaN-based led towards efficient green emission / Gary Tan
حسب: Tan, Gary
منشور في: (2024)

A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
حسب: Hussein, Asaad Shakir
منشور في: (2011)

DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
حسب: Munir, Tariq
منشور في: (2011)

Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
حسب: Shamsuddin, Siti Nur Atikah
منشور في: (2019)

Growth of semi-polar (11-22) GaN epitaxial layer on M-plane sapphire via MOCVD / Mohd Afiq Anuar
حسب: Mohd Afiq , Anuar
منشور في: (2020)

The Growth Of GaN-Based Low Dimensional Structures By CVD Using Platinum And Palladium Catalysts
حسب: Lay Kim, Tan
منشور في: (2019)

Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
حسب: Al-Heuseen, Khalled Mhammad Kallef
منشور في: (2011)

Al-Ta2O5-GaN Semiconductor Device Structure
حسب: Yeoh, Lai Seng
منشور في: (2014)

First-principles study of structural, electronic and optical properties of AlN, GaN, InN and BN compounds
حسب: Al-Sardia, Mowafaq Mohammad Kethyan
منشور في: (2013)

Gallium Nitride (GaN) Based Gas Sensor Using Catalytic Metal [TK7871.15.G33 H884 2005 f rb].
حسب: Omer Hudeish, Abdo Yahya
منشور في: (2005)

Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
حسب: Kamarulzaman, Azharul Ariff
منشور في: (2017)

Structural And Optical Properties Of AlxInyGa1-x-yN Thin Films
حسب: Abed, Muslim A.
منشور في: (2012)

Simulation of performance on multi-quantum-well violet InGaN laser diode and analysis of its output for digital modulation
حسب: Abdullah, Rafid A.
منشور في: (2010)

Growth Of Gan Films On Gaas (100) Substrate By Rf-Sputtering And E-Beam Evaporation Techniques
حسب: Md Taib, Muhamad Ikram
منشور في: (2016)

Structural And Optical Studies Of Wide Band-Gap AlxGa1-xN (0 ≤ x ≤ 1) Semiconductors [TK7871.85. N577 2007 f rb].
حسب: Ng, Sha Shiong
منشور في: (2007)

Epitaxial Growth Of Gan On Gan Multi Quantum Well For The Deep Green Light Emitting Diode
حسب: Abdul Rais, Shamsul Amir
منشور في: (2022)

Dianosing Heart Diseases Using ANN and GA
حسب: Mohammed, Ghassan Nashat
منشور في: (2009)

The Study Of Gan Materials For Device Applications [QD181.N1 Y19 2007 f rb].
حسب: Yam, Fong Kwong
منشور في: (2007)

Zno Growth Mechanism And Heterostructures On Gan And Diamond
حسب: Tneh , Sau Siong
منشور في: (2016)

Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
حسب: Mohmad Zaini, Siti Nurul Waheeda
منشور في: (2015)

Factors that influence SME growth in GanSu China
حسب: Cai, Jun Quan
منشور في: (2006)

Ionizing radiation effect of gamma ray and neutron flux On n-ZnO/pCuGaO2 Heterojunction Diode for flexible space electronics application
حسب: Mivolil Duinong
منشور في: (2019)

Evaluation of Search Result of Document Search Based GA (DSEGA)
حسب: Kamal Norfarid, Kamaruddin
منشور في: (2004)

GA Based Feature Recognition of Step File for CAD/CAM Integration
حسب: Syafnil, Alfais Admiral
منشور في: (2009)

Characterization Of Gan Nanowies Grown By Thermal Evaporation On Different Substrates And The Study Of Their Capability As A Solar Cell
حسب: Shekari, Leila
منشور في: (2013)

Density functional calculation for electronic structure properties of graphene adsorbed with GaAs nanostructure
حسب: Abubakar, Shamsu
منشور في: (2014)

Modified workflow scheduling using hybrid PSO-GA algorithm in cloud computing
حسب: Oke, Omotayo Patrick
منشور في: (2019)

Finding minimum path by using Genetic Algorithm (GA)/ Siti Zuraifah Hashim
حسب: Hashim, Siti Zuraifah
منشور في: (2007)

Real coded GA for tuning of semi-active railway vehicle suspension system
حسب: Bagheri, Arash
منشور في: (2015)

Invigilation timetabling system using genetic algorithm (GA) / Shahirah Mohamed Hatim
حسب: Shahirah, Mohamed Hatim
منشور في: (2011)

GA Based Model for Real Time Dispatching in Silterra-An Approach to Dispatcher Optimization
حسب: Sathasivam, Renetha Malar
منشور في: (2008)

Inductively Coupled Plasma Etching On Gan
حسب: Rosli, Siti Azlina
منشور في: (2010)

The Study Of Gan Materials For Device Applications
حسب: Yam, Fong Kwong
منشور في: (2007)

Direct conversion of methane to liquid hydrocarbons over Ga-HZSM-5 zeolite catalyst
حسب: Ali @ Mahmud, Asmadi
منشور في: (2000)